Temporal electron-spin splitter based on a novel semiconductor magnetic quantum microstructure with zero average magnetic fields. (English) Zbl 1538.82063
Summary: The dwell time is calculated for electron in a novel magnetic nanostructure with zero average magnetic fields, which is realized experimentally by constructing three nanosized ferromagnetic stripes on top and bottom of the InAs/\(\mathrm{Al_x In_{1-x}As}\) heterostructure. Although structural magnetic fields are averagely equal to naught, the dwell time is still dependent on electron spins owing to the spin-field interaction. Due to the dependence of effective potential experienced by electron on structural parameters (such as magnetic strength and device width), spin-polarized dwell time can be conveniently modulated by reasonably fabricating ferromagnetic stripes. As a result, this novel magnetic microstructure can act as a temporal electron-spin splitter for spintronic device applications.
MSC:
| 82D37 | Statistical mechanics of semiconductors |
| 82D80 | Statistical mechanics of nanostructures and nanoparticles |
| 82D40 | Statistical mechanics of magnetic materials |
| 78A35 | Motion of charged particles |
Keywords:
semiconductor magnetic quantum microstructure; dwell time; spin polarization; temporal electron-spin splitterReferences:
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