Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005
The copper diffusion barrier properties of amorphous boron carbo-nitride (BCxNy) films were studi... more The copper diffusion barrier properties of amorphous boron carbo-nitride (BCxNy) films were studied. The BCxNy films were deposited by chemical vapor deposition at 360°C and 1Torr using dimethylamine borane with no reaction gas (BC0.37N0.15), with NH3(BC0.19N0.44), or with C2H4(BC0.90N0.08); their dielectric constants were 4.1, 4.4, and 3.9, respectively. A SiC0.76N0.44 film was used to benchmark the study. Barrier films were deposited on 7nm thermal oxide∕n-type Si substrates. The leakage current for BC0.90N0.08, 1.1×10−8A∕cm2 at 0.5MV∕cm, is the lowest of the three but it is larger than that of the benchmark SiC0.76N0.44 film, 5.5×10−9A∕cm2. Time dependent dielectric breakdown is used to test barrier time-to-failure of Cu-gate capacitors at 150°C and +2to5MV∕cm. BC0.90N0.80 displayed barrier performance comparable to SiC0.76N0.44 and was noticeably better than BC0.37N0.15 and BC0.19N0.44. Overall, BCxNy barriers are promising and are improved with lower boron content, fewer B–B bo...
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